INTERFAST lays the foundations for a fully innovative adaptable magnetic-based computing&sensing technology, aiming at the construction of a new and competitive pillar in the race for beyond CMOS era. The technology is applied to most relevant spintronic device cases and is based on the voltage gating modulation of chemical bonding at hybridised interfaces between metallic and molecular layers. The modification of the bonding induces sizeable modification of the electronic properties at the surface of the metallic spintronic element. This unavoidably alters the most relevant solid-state parameters, among which the spin-orbit coupling. The modulation of the hybridisation is an electronic process and is accounted by ps-fs characteristic time scales, thus opening yet unexplored routes towards ultrafast information processing.
You can find additional details on the project page.
This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement N° 965046 .