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JOŽEF STEFAN INSTITUTE
Department of Complex Matter
Jamova cesta 39, 1000 Ljubljana, Slovenia

Dynamics of Quantum matter

We explore non-equilibrium many-body dynamics in quantum systems that experience symmetry-breaking, topological, or jamming transitions. These systems encompass superconductors, charge-density wave, and magnetic materials.

Experimental Soft Matter Physics

The research is conducted within the “Light and Matter” research program. The interaction of light with matter is one of the most important fields of physics and optical processes are indispensable in many branches of modern industry.

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February 6, 2024
The absence of efficient light modulators for extreme ultraviolet - EUV and X-ray photons considerably limits their real-life application, particularly when even slight complexity of the beam patterns is required. In ...

Home / Dynamics of Quantum Matter / Charge configuration memory (CCM) devices

Charge configuration memory (CCM) devices

Our primary research objective is to create ultra-energy-efficient and ultrafast memristors by harnessing the switching properties of the metastable metallic state of 1T-TaS2. These memristors are intended for use in cryocomputing environments. Our main focus is on achieving unparalleled performance while ensuring reliability and practicality when integrated into a package or chip.

Specifically, we are directing significant efforts towards incorporating these Cryogenic Compatible Memristors (CCMs) into superconducting flux quantum (SFQ) circuits, alongside nano-cryotron amplifiers. This integration aims to leverage the advantages of both CCMs and SFQ circuits to advance the field of cryocomputing.

research nanoscale memory devices

Some of our articles on the topic:

  1. Mraz, A. Charge configuration memory device for use in cryo computing. (2023). 
  2. Mraz, A. et al. Manipulation of fractionalized charge in the metastable topologically entangled state of a doped Wigner crystal. Nat. Commun. 14, 8214 (2023). 
  3. Venturini, R. et al. Ultraefficient resistance switching between charge ordered phases in 1T-TaS2 with a single picosecond electrical pulse. Appl Phys Lett 120, 253510 (2022). 
  4. Mraz, A. et al. Charge Configuration Memory Devices: Energy Efficiency and Switching Speed. Nano Lett 22, 4814–4821 (2022). 
  5. Mihailovic, D. et al. Ultrafast non-thermal and thermal switching in charge configuration memory devices based on 1T-TaS. APL 119, 013106 (2021). 
  6. Mraz, A., Kabanov, V. V. & Mihailovic, D. Implementation of Charge Configuration Memory in a Cryocomputing Environment. 1–13 (2020). 
  7. Vaskivskyi, I. et al. Fast electronic resistance switching involving hidden charge density wave states. Nat Commun 7, 11442 (2016).
  8. Vaskivskyi, I. et al. Controlling the metal-to-insulator relaxation of the metastable hidden quantum state in 1T-TaS 2. Sci. Adv. 1, e1500168 (2015).